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   DH60-18A 0 400 800 1200 1600 0 200 400 [ns] 600 800 1000 1200 1400 0.001 0.01 0.1 1 10 0.0 0.1 0.2 0.3 0.4 0 40 80 120 160 0.0 0.5 Kf 1.0 1.5 2.0 0 200 400 600 800 1000 0 30 [V] 60 FR 90 120 150 0.0 0.5 1.0 1.5 2.0 2.5 0 400 800 1200 1600 0 20 [A] 40 RM 60 80 100 0123 100 1000 0 10 r 20 30 40 0 20 40 [A] 60 F 80 100 120 140 VFR tfr IRM Qr I VF [V] Q [nC] -diF/dt [A/μs] I -diF/dt [A/μs] TVJ [°C] trr -diF/dt [A/μs] diF/dt [A/μs] V t [s] ZthJC [K/W] Fig. 1 Typ. rward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt Fig. 3 Typ. peak reverse current IRM versus -diF/dt Fig. 4 Dynamic parameters Qr,IRM versus TVJ Fig. 5 Typ. recovery time trr versus -diF/dt Fig. 6 Typ. peak forward voltage VFR & typ. forward recovery time tfr versus diF/dt Fig. 7 Transient thermal resistance junction to case tfr [μs] TVJ=100°C VR = 1200 V IF = 60 A TVJ= 100°C VR = 1200 V IF=60 A TVJ=100°C VR =1200 V IF =60 A TVJ=100°C VR =1200 V TVJ = 125°C TVJ =25°C iRi i 1 0.021 0.0093 2 0.11 0.038 30.1690.274 IXYS reserves the right to change limits, conditions and dimensions. ? 2011 IXYS all rights reserved 20110908b Data according to IEC 60747and per diode unless otherwise specified |